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Atomic Layer Deposition System
HHV supports Make in India with Made in India: Develops Atomic Layer Deposition System for Nanotechnology Research
Atomic Layer Deposition (ALD) is a process technique that builds up thin film layers one monolayer at a time. The deposition technique gives great control over the thickness and the properties of the deposited films. Pin-hole free films can be deposited over large areas with extreme conformality, repeatability and precision.
The films are built up by the exposure of the precursor materials to the substrate in a sequential manner. A continuous stream of purging gas ensures the removal of the excess precursors & other by-products from the chamber. A typical ALD deposition cycle starts with the introduction of the first precursor into the process chamber. The vapour pressure of the precursor, its residence time in the chamber, and the substrate temperature are adjusted so that a self limiting layer is chemisorbed onto the surface of the substrate. The excess precursor material and the by-products are then purged out of the chamber by the stream of inert gas. The second precursor material is then introduced into the chamber which reacts with the layer formed by the first precursor, thus completing the formation of a self-limiting compound layer. The excess precursors, and the by-products are again purged out by the inert gas. Under appropriate deposition conditions, each of this cycle of:1. Introduction of reactant 1 (precursor A); 2. Purging;3. Introduction of reactant 2 (precursor B); and 4.Purging, results in the formation of a monolayer of the deposited film onto the substrate.
HHV has developed the ALD 150 tool based on the technology transferred from IIT Bombay with the following features:
FEATURES:
- Technology : Licensed from IIT-Bombay
- Mode : Thermal
- Substrate Size : Up to 6” diameter flat substrates
- Substrate Temperature : Up to 350 °C
- Number of Precursors : 2 lines in basic version. Expandable up to 6 lines.
- Vacuum System : Oil Rotary Pump (or) Dry Scroll Pump with Heated Trap
- Interface : Laptop
- Software : National Instruments Labview
The ALD process finds applications in various areas such as electronics, optics, energy, life sciences, sensors, instrumentation, nanotechnology, medical, biological, mechanical, chemical, flexible devices, etc. In order to cater to the different segments, various recipes can be offered such as:
Inorganic Materials:
Aluminium Oxide, AluminiumSulphide, Zinc Oxide, Zinc Nitride, Indium Sulphide, Molybdenum Oxide, Molybdenum Nitride, Molybdenum Sulphide, Tungsten Oxide, Tungsten Nitride, Tungsten Disulfide, Nickel Sulphide, Cobalt Oxide,Antimony Sulphide, andTitanium Sulphide.
Hybrid Inorganic/Organic polymers throughALD/MLD:
Aluminium Oxide/Alucone, Zinc oxide/Zincone
In addition to these, further recipes can be developed based on requirement.
Market analysis shows that the ALD technology is going to witness a compound annual growth rate (CAGR) of 19.1% from 2016-2021, leading to a global market size of almost $3.7 billion in the end year [BCC Research report Atomic layer Depostion and other Ultrathin-Film Fabrication Processes (SMC061C)]. HHV is geared up to support the Indian and international research and businesses with its product offerings.
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