RIE Tool ION-ETCH150

RIE For Nano Fabrications

The HHV ION-ETCH 150 Reactive Ion Etching system is a compact system for use in nanofabrication technology applications. The capacitively-coupled plasma reactor is configured for the etching of silicon based materials, compound semiconductors, dielectrics, sputtered metal films, polymer and other materials. The 300 mm chamber can take substrates up to 6” diameter and incorporates a gas shower head for uniform process gas distribution. The system is computer controlled and has a turbo pumping system to provide base vacuum. An optional wet-type dynamic oxidation abatement system facilitates neutralisation of the process gases.

Reactive Ion Etching (RIE) used as a machining process of Integrated Circuit (IC) devices, nano and micro scale devices. As such today, RIE is a key enabling technology for MEMS and NEMS fabrication.

It is a standalone, manual/PC controlled Reactive Ion Etching (RIE) system. It is a versatile system with a shower head gas distribution of Argon (Ar), Oxygen (O₂), SF₆, CH₃, CF₄ and N₂ gas distribution.  It has a stain less circular chamber of size 300mm (diameter) x 300mm (ht) that open at the front for substrate loading. Chamber has view port for viewing the plasma. The round substrate holder can accommodate 2-6inch diameter substrate and the gap can be adjusted between substrate holder and the gas shower-head manually.

The chamber is extremely clean in design and reaches 10^-9 mbar with the turbo-pump based pumping system. The RF power is provided by 600 W 13.5 MHz power supply. The system is completely automated and is PC controlled. A dry bed abatement system provided at the exhaust neutralizes the processed gases before it is out to atmosphere.